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Line of High-Speed CMOS Synchronous DRAMs with Densities up to 256 Mbit

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Line of High-Speed CMOS Synchronous DRAMs with Densities up to 256 Mbit 

A full line of new, high-speed CMOS synchronous DRAMs (SDR) with densities of 64 Mbit (AS4C4M16S), 128 Mbit (AS4C8M16S) and 256 Mbit (AS4C16M16S), is optimized for industrial, communications, medical and consumer products requiring high memory bandwidth.  The devices introduced by Alliance Memory are particularly well suited to high-performance PC applications. 

The SDRs are internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, operate from a single +3.3-V (± 0.3V) power supply and are lead (Pb) and halogen free. Packaged in a 54-pin, 400-mil plastic TSOP II, the new SDRs offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates from 143 MHz to 200 MHz. 

Alliance Memory’s SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Pricing for U.S. delivery ranges from $0.90 to $1.80 in 1,000-piece quantities.

Alliance Memory, San Carlos, CA. (650) 610-6800. [www.alliancememory.com].