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8Gbit LPDDR4 DRAM Ultra-Fast Mobile Memory

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What is being billed as the industry’s first 8 Gbit, low-power, double data rate 4 (LPDDR4), mobile DRAM has been announced by Samsung. Samsung’s new high-speed 8 Gbit LPDDR4 mobile DRAM will provide the highest level of density, performance and energy efficiency for mobile memory applications, enabling end users to have faster, more responsive applications, more advanced features and higher resolution displays while maximizing battery life. This next-generation LPDDR4 DRAM is expected to contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market.

In addition, Samsung’s new 8 Gbit LPDDR4 uses a Low Voltage Swing Terminated Logic (LVSTL) I/O interface, which was originally proposed by Samsung to JEDEC and has become a standard specification for LPDDR4 DRAM. Based on this new interface, the LPDDR4 chip will enable a data transfer rate per pin of 3,200 megabits per second (Mbit/s), which is twice that of the 20nm-class LPDDR3 DRAM now in mass production. Overall, the new LPDDR4 interface will provide 50 percent higher performance than the fastest LPDDR3 or DDR3 memory. Also, it consumes approximately 40 percent less energy at 1.1 volts. With the new chip, Samsung will focus on the premium mobile market including large screen UHD smartphones, tablets and ultra-slim notebooks that offer four times the resolution of full-HD imaging, and also on high-performance network systems.

Samsung Semiconductor
www.samsung.com